A method for the simulation of the transfer of charge carriers and the distribution of electrostatic potential in semiconductor structures

A method is proposed for the electrical simulation of nonstationary problems involving hole and electron transfer and electrostatic potential distribution using three RCI networks (active RC circuits). The network cells are interrelated so that a change in the potential of one network leads to changes of potential in the others. It is noted that the proposed analog processor can serve as the starting point for the development of hybrid systems or for the development of digital parallel processors.