Investigation of a two-dimensional model of an MOS structure
Abstract
It is shown that a combined numerical method including the method of upper block relaxation and the Newton method can be used to solve the finite-difference equations describing a short-channel two-dimensional MOS structure. A FORTRAN program developed on the basis of the proposed algorithm is described. Preliminary results show that the combined method can be used to analyze complex two-dimensional MOS-structure models, allowing for the dependence of carrier mobility on transverse and longitudinal controlling fields. The two-dimensional continuity equation can be solved by considering the transverse component of the current density.
- Publication:
-
Elektronnoe Modelirovanie
- Pub Date:
- October 1983
- Bibcode:
- 1983ElMod...5...21M
- Keywords:
-
- Carrier Transport (Solid State);
- Computerized Simulation;
- Finite Difference Theory;
- Metal Oxide Semiconductors;
- Two Dimensional Models;
- Electrical Properties;
- Fermi Surfaces;
- Fortran;
- Newton Methods;
- Newton-Raphson Method;
- Partial Differential Equations;
- Relaxation Method (Mathematics);
- Electronics and Electrical Engineering