Hydrogenation of electron traps in bulk GaAs and GaP
Abstract
The effect of hydrogenation on a variety of electrically active defects in bulk single-crystal GaAs and GaP has been observed using transient capacitance spectroscopy. Approximately half the different defect states in these materials were neutralized by hydrogen incorporation. The efficiency of neutralization was slightly more pronounced for defects in GaAs compared to those in GaP.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1983
- DOI:
- 10.1049/el:19830714
- Bibcode:
- 1983ElL....19.1052P
- Keywords:
-
- Crystal Defects;
- Electron Capture;
- Gallium Arsenides;
- Gallium Phosphides;
- Hydrogenation;
- Semiconductors (Materials);
- Capacitance;
- Single Crystals;
- Spectroscopic Analysis;
- Transient Response;
- Solid-State Physics