Monolithic PIN/preamplifier circuit integrated on a GaAs substrate
Abstract
An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 10,000 V/A have been determined from the measurement.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1983
- DOI:
- Bibcode:
- 1983ElL....19.1031W
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- P-I-N Junctions;
- Photodiodes;
- Preamplifiers;
- Aluminum Gallium Arsenides;
- Amplifier Design;
- Field Effect Transistors;
- Heterojunction Devices;
- Impedance Measurement;
- Photosensitivity;
- Substrates;
- Electronics and Electrical Engineering