High-quality 1.3 micron GaInAsP/InP BH-DFB lasers with first-order gratings
Abstract
High-quality 1.3 micron GaInAsP/InP BH-DFB lasers have been demonstrated. The threshold current was 16 mA and the differential quantum efficiency was 25 percent per facet. A stable single-longitudinal-mode oscillation was obtained, both up to four times the threshold current and up to 85 C. These results are comparable or superior to reported results of Fabry-Perot BH lasers.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1983
- DOI:
- 10.1049/el:19830642
- Bibcode:
- 1983ElL....19..941O
- Keywords:
-
- Gratings (Spectra);
- Heterojunction Devices;
- Indium Phosphides;
- Infrared Lasers;
- Laser Outputs;
- Semiconductor Lasers;
- Gallium Arsenides;
- Gallium Phosphides;
- Indium Arsenides;
- Integrated Optics;
- Quantum Efficiency;
- Threshold Currents;
- Lasers and Masers