High-speed infra-red modulator with multilayered pn-junctions
Abstract
A high-speed infra-red modulator having a GaAs multilayered pn-junction and resonator structure is proposed. Device operation is based on infra-red interaction with injected carriers at each junction. The performance calculation reveals an amplitude of 50 percent, and an approximately pi phase modulation depth with expected bandwidth in the gigahertz order.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1983
- DOI:
- Bibcode:
- 1983ElL....19..940Y
- Keywords:
-
- Gallium Arsenides;
- Infrared Lasers;
- Light Modulation;
- P-N Junctions;
- Semiconductor Lasers;
- Carrier Injection;
- High Speed;
- Optical Resonators;
- Performance Prediction;
- Electronics and Electrical Engineering