Behaviour of device structures based on IDT-launched bulk acoustic waves in a parallel-sided plate of lithium niobate
Abstract
Device responses due to fast shear and longitudinal waves, which propagate between a pair of IDTs on an upper surface via a reflection from the lower surface of a parallel-sided plate of 41 deg-rotated Y-cut lithium niobate are presented. Single-mode response can be obtained by removing unwanted modes using saw cuts in the crystal substrate. Center-frequency and bandwidth enhancement of a factor of two or more are achievable compared with the SAW response of the same IDTs.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1983
- DOI:
- Bibcode:
- 1983ElL....19..871B
- Keywords:
-
- Bulk Acoustic Wave Devices;
- Digital Transducers;
- Lithium Niobates;
- Ultrasonic Wave Transducers;
- Crystal Oscillators;
- Frequency Response;
- Insertion Loss;
- Longitudinal Waves;
- Electronics and Electrical Engineering