New Ga(0.47)In(0.53)As sheet-charge field-effect transistor for long-wavelength optoelectronic integration
Abstract
A Ga(0.47)In(0.53)As field-effect transistor with an extremely highly doped (2 x 10 to the 18th/cu cm) and ultrathin (140 A) channel layer is demonstrated. A transconductance of 80 mS/mm was measured for a device with a gate length of 2 microns. A photoconductive detector made from this structure is also reported. This structure may be useful for integrated photoreceiver applications.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1983
- DOI:
- Bibcode:
- 1983ElL....19..791C
- Keywords:
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- Field Effect Transistors;
- Heterojunction Devices;
- Integrated Optics;
- Photoconductors;
- Radiation Detectors;
- Ternary Alloys;
- Capacitance;
- Doped Crystals;
- Gallium Arsenides;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Photonics;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering