GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process
Abstract
The fabrication and characterization of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapor deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1983
- DOI:
- 10.1049/el:19830518
- Bibcode:
- 1983ElL....19..759H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Crystal Growth;
- Heterojunction Devices;
- Semiconductor Lasers;
- Vapor Deposition;
- Fabrication;
- Far Fields;
- Liquid Phase Epitaxy;
- Organometallic Compounds;
- Threshold Currents;
- Lasers and Masers