Highly stable FET DROs using new linear dielectric resonator material

The development of new low-loss dielectric resonator stabilized FET oscillators (DROs) is presented. A new barium titanate material is developed which is found to have a positive and constant stability factor (3 to 10 ppm/K) and quality factors of approximately 2500. It is determined that the achieved frequency drift over the temperature range of -30 to 80 C of GaAs FET DROs using dielectric resonators made from the new barium titanate material is of the order of 150 to 200 kHz at 10.9 GHz.