Direct observation of visibility curve of semiconductor lasers
Abstract
A method is developed for determining the linewidth of semiconductor lasers. This simple method provides high resolution, and can be regarded as either a multiple Michelson interferometer or a frequency-domain reflectometry technique with partially coherent light. This method utilizes the tuning of the laser frequency, the observation of the backscattered light from a single-mode fiber, and Fourier-transform evaluation. The feasibility of this method is evaluated using a GaAlAs laser with an emission wavelength of 780 nm operated at a bias current of 60 mA.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1983
- DOI:
- 10.1049/el:19830503
- Bibcode:
- 1983ElL....19..739E
- Keywords:
-
- Laser Spectroscopy;
- Semiconductor Lasers;
- Spectral Line Width;
- Spectrum Analysis;
- Aluminum Gallium Arsenides;
- Feasibility Analysis;
- Fiber Optics;
- Laser Outputs;
- Light Scattering;
- Michelson Interferometers;
- Reflectometers;
- Visibility;
- Lasers and Masers