a-Si:H MIS position sensitive detector by anodic oxidation processes
Abstract
The first fabrication of an amorphous silicon position-sensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm x 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1983
- DOI:
- Bibcode:
- 1983ElL....19..628A
- Keywords:
-
- Amorphous Semiconductors;
- Mis (Semiconductors);
- Radiation Detectors;
- Silicon Films;
- Amorphous Silicon;
- Anodizing;
- Fabrication;
- Hydrogenation;
- Oxidation;
- Photoelectric Emission;
- Photosensitivity;
- Solar Cells;
- Electronics and Electrical Engineering