Ultrafast GaAs microwave PIN diode
Abstract
This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n(+) substrate by MOCVD of a 2 micron, 10 to the 15th/cu cm unintentionally doped n(-) layer followed by a 0.3 micron, 4 x 10 to the 19th/cu cm Zn doped p(+) layer. The isolation and insertion loss of a single shunt-mounted device are typically -27 dB and 0.7 dB, respectively. The switching speed of the device was measured to be less than 1 ns.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1983
- DOI:
- Bibcode:
- 1983ElL....19..479T
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Junction Diodes;
- Microwave Circuits;
- Microwave Switching;
- P-I-N Junctions;
- Equivalent Circuits;
- Insertion Loss;
- Switching Circuits;
- Vapor Phase Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering