Novel design of travelling-wave FET
Abstract
A novel travelling-wave field-effect transistor (FET) is proposed, taking into account a design in which an additional image gate is placed beside the drain of the FET as a phase velocity synchronizer. A small-signal analysis is conducted on the basis of coupled wave theory. It is found that the considered device is capable of providing a high gain and a wide bandwidth amplification. The synchronization of the phase velocity on the drain line with that of the gate line can be easily achieved by adjusting the image gate voltage.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1983
- DOI:
- 10.1049/el:19830314
- Bibcode:
- 1983ElL....19..461W
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Microwave Amplifiers;
- Power Gain;
- Traveling Wave Amplifiers;
- Design Analysis;
- Equivalent Circuits;
- Gates (Circuits);
- Phase Velocity;
- Semiconductor Devices;
- Electronics and Electrical Engineering