Use of a Cf-252 source in cosmic ray simulation studies on CMOS memories
Abstract
A laboratory Cf-252 source has been found to provide a convenient and satisfactory technique for evaluating the susceptibility of VLSI static RAMs to cosmic-ray-induced single-event upsets. The calibration and use of the system are described, and results for some commercial CMOS RAMs are presented.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1983
- DOI:
- Bibcode:
- 1983ElL....19..373S
- Keywords:
-
- Cmos;
- Cosmic Rays;
- Environment Simulation;
- Ion Sources;
- Radiation Effects;
- Random Access Memory;
- Chips (Memory Devices);
- Circuit Reliability;
- Error Analysis;
- Heavy Ions;
- Single Event Upsets;
- Vacuum Deposition;
- Very Large Scale Integration;
- Electronics and Electrical Engineering