(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
Abstract
The first fabrication and high-speed operation of a three-terminal (AlGa)As/GaAs heterojunction bipolar transistor with graded bandgap base is reported. Cutoff frequencies up to 16 GHz have been achieved in devices fabricated from material made by molecular beam epitaxy. This work demonstrates the feasibility of using a graded (AlGa)As base to enhance the speed of heterojunction bipolar transistors.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1983
- DOI:
- 10.1049/el:19830254
- Bibcode:
- 1983ElL....19..367M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Energy Gaps (Solid State);
- Fabrication;
- Gallium Arsenides;
- Heterojunction Devices;
- Amplification;
- Band Structure Of Solids;
- Bandwidth;
- Frequency Response;
- Molecular Beam Epitaxy;
- Time Response;
- Electronics and Electrical Engineering