Effect of electric fields on long-wavelength response of infra-red detectors
Abstract
The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is investigated quantitatively at wavelengths beyond the zero-field cutoff. General formulas are derived and numerical results are presented for Si:P and Si:In. It is concluded that these results indicate the possibility of narrow-bandwidth detection and electronically modulated response.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1983
- DOI:
- 10.1049/el:19830199
- Bibcode:
- 1983ElL....19..284C
- Keywords:
-
- Electric Fields;
- Infrared Detectors;
- Semiconductor Devices;
- Semiconductors (Materials);
- Spectral Sensitivity;
- Indium;
- Phosphorus;
- Photoionization;
- Photons;
- Silicon;
- Wentzel-Kramer-Brillouin Method;
- Solid-State Physics