High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy
Abstract
A novel heterojunction phototransistor (HPT) structure is proposed using two base regions such that the emitter-base depletion region is located in the wide-gap material. Very small area HPTs have been fabricated on semiinsulating substrates. Maximum current gain is beta = 300. The response time, with rise time as short as 250 ps and FWHM = 320 ps, has been obtained using a picosecond pulse dye laser.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1983
- Bibcode:
- 1983ElL....19..278S
- Keywords:
-
- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- Phototransistors;
- Time Response;
- Aluminum Gallium Arsenides;
- Crystal Growth;
- Dye Lasers;
- High Speed;
- Picosecond Pulses;
- Pulsed Lasers;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering