Ge-seeded crystallisation on SiO2 by using a slider system with RF heated strip heater
Abstract
A slider system has been developed for crystallization of semiconductor films on SiO2. The system consists of a graphite support, graphite strip heater and movable quartz substrate holder. A two heater procedure can be achieved with an RF heating coil. Single-crystal Ge films have been successfully grown over SiO2 on a Si substrate using a hetero-lateral epitaxy by seeded solidification technique.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1983
- DOI:
- 10.1049/el:19830192
- Bibcode:
- 1983ElL....19..274O
- Keywords:
-
- Crystallization;
- Germanium;
- Radio Frequency Heating;
- Semiconducting Films;
- Silicon Dioxide;
- Fabrication;
- Heaters;
- Single Crystals;
- Sliding Contact;
- Substrates;
- Temperature Dependence;
- X Ray Diffraction;
- Solid-State Physics