CW operation of 1.5 micron GaInAsP/InP buried heterostructure laser with a reactive ion-etched facet
Abstract
The reacctive ion-etching RIE technique is forming facet mirrors for 1.5 micron GaInAsP/InP buried-heterostructure (BH) lasers is reported. Room temperature CW operation has been achieved with BH lasers having one of the facets formed by RIE and metallic coating and the other by cleaving. The laser with 330 micron long cavity has a 110 mA threshold.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1983
- DOI:
- 10.1049/el:19830147
- Bibcode:
- 1983ElL....19..213M
- Keywords:
-
- Continuous Wave Lasers;
- Etching;
- Heterojunction Devices;
- Indium Phosphides;
- Infrared Lasers;
- Semiconductor Lasers;
- Arsenic Compounds;
- Fabrication;
- Gallium Compounds;
- Ionic Reactions;
- Laser Cavities;
- Metal Coatings;
- Room Temperature;
- Threshold Currents;
- Lasers and Masers