Bulk unipolar diodes in MBE GaAs
Abstract
Bulk unipolar (camel) diodes in GaAs have been made using thin, buried p(+) layers doped with beryllium and grown by MBE. Barrier heights in the range 0.55 eV to 0.94 eV have been obtained by varying the p(+)-layer thickness. In all cases the ideality factors of the diodes were less than 1.5.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1983
- DOI:
- Bibcode:
- 1983ElL....19..181W
- Keywords:
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- Conduction Bands;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Semiconductor Diodes;
- Volt-Ampere Characteristics;
- Barrier Layers;
- Electric Contacts;
- Fabrication;
- Metal Surfaces;
- Room Temperature;
- Schottky Diodes;
- Electronics and Electrical Engineering