High-performance modulation-doped GaAs integrated circuits with planar structures
Abstract
A planar process of using proton isolation for modulation-doped GaAs/GaAlAs integrated circuits is presented. Devices with very low contact resistance (5 x 10 to the -7th ohm sq cm) and very high transconductance (210 ms/mm) have been achieved. DCFL ring oscillators with 10 micron switching FETs have been operated at tau = 36.6 ps at room temperature and 27.3 ps at 77 K. The lowest speed-power product is 2.43 fJ per gate.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1983
- DOI:
- 10.1049/el:19830109
- Bibcode:
- 1983ElL....19..155L
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Integrated Circuits;
- Planar Structures;
- Volt-Ampere Characteristics;
- Aluminum Gallium Arsenides;
- Contact Resistance;
- Doped Crystals;
- Fabrication;
- Modulation;
- Molecular Beam Epitaxy;
- Performance Tests;
- Room Temperature;
- Electronics and Electrical Engineering