Monte Carlo particle simulation of a GaAs short-channel MESFET
Abstract
A Monte Carlo particle simulation of a 0.25 micron-long gate (and 0.25 micron-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of g(m) and I(dss) of 643 mS/mm and 5.35 mA/20 micron were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1983
- DOI:
- Bibcode:
- 1983ElL....19...20A
- Keywords:
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- Electron Distribution;
- Field Effect Transistors;
- Gallium Arsenides;
- Monte Carlo Method;
- Schottky Diodes;
- Systems Simulation;
- Electron Transfer;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering