Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition

High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C₂H₅)₃Ga with NH₃. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after compensating the background donor concentration (typically N_D ∼1×10¹⁹ cm^-3) with Be⁺ or N⁺ implants. These Schottky barriers were electrically and optically characterized.