MOS /metal oxide semiconductor/ physics and technology

Because of its depth of treatment, this book should be useful to research workers in the MOS field. Because of its careful development, it should be accessible to graduate students. A qualitative introduction to the electrical properties of the MOS system is presented, and a brief history of the development of the MOS field is provided. The basic small-signal theory of the MOS capacitor is developed, including bulk traps, and a description is given of the small-signal, steady-state methods for measuring the electrical properties of the MOS system. The extraction of interface trap properties from the capacitance is considered along with the measurement of silicon properties, charges, barrier heights, flatband voltage, charge trapping in the oxide, instrumentation for measuring capacitor characteristics, and the oxidation of silicon. Attention is given to silicon oxidation technology, and control of oxide charges, and models of the interface.