GaAs monolithic microwave subsystem technology base
Abstract
During this reporting period, the effort was primarily aimed at developing a number of technologies critical to the development of a 3-W, 8-12 GHz amplifier. These technologies included 1)vias, 2) air bridges, 3) deep UV photolithography for 0.7 micrometer gates, 4) overlay capacitors. In the circuit area, 'cell cluster' matching techniques were demonstrated in a hybrid combiner circuit and several monolithic two stage amplifier were evaluated. A 5-10 GHz amplifier run incorporating vias and airbridges, was measured and produced 1 watt output from equal 5.5-9.0 GHz with 9 dB associated gain. An 8-12 GHz, two stage amplifier was also designed using 1 micrometer gate length FETs. While these FETs were not optimum for 12-GHz operation, this amplifier was predicted and measured to have a power output of 400-500 mW with 7 dB associated gain over the 8-12 GHz range.
- Publication:
-
Annual Technical Report
- Pub Date:
- March 1982
- Bibcode:
- 1982wdes.rept.....D
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Capacitors;
- Field Effect Transistors;
- Gates (Circuits);
- Photolithography;
- Ultraviolet Radiation;
- Electronics and Electrical Engineering