Advanced submicron FETs
Abstract
Replacing the mushroom gate profile with a better collimated evaporation has resulted in FETs with equivalent performance. Balanced FETs have been fabricated with equivalent dc performance to their unbalanced counterparts, but with inferior RF performance.
- Publication:
-
Semiannual Report
- Pub Date:
- March 1982
- Bibcode:
- 1982vara.rept.....B
- Keywords:
-
- Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Low Noise;
- Crystal Growth;
- Direct Current;
- Epitaxy;
- Performance Tests;
- Radio Frequencies;
- Electronics and Electrical Engineering