Near millimeter wave local oscillator sources proof of concepts

This final report describes research on the demonstration of a new solid state oscillator source principle in a GaAs/AlGaAs heterostructure. The negative differential resistance is based upon a real space transfer of hot electrons from a high mobility GaAs layer to a low mobility AlGaAs layer in the heterostructure. Tunable radiation in the 2-25 MHz range was achieved at a power level of 30 milliwatts in a first device. The potential exists to extend this oscillator into the 100-1000 GHz range since the transit time is associated with time of travel between the 100 A layers in the heterostructure.