Photoelectronic properties of zinc phosphide crystals, films, and heterojunctions
Abstract
The research on zinc phosphides is summarized and includes: ZnP2 materials preparation; electrical characterization of Zn3P2 crystals; characterization by low temperature photoluminescence, photoconductivity, Auger electron spectroscopy, and transmission electron microscopy; investigation of Zn3P2 based devices; and Zn3P2 films grown by close spaced vapor transport. An approach to future research on Zn3P2 is summarized and includes: chemical vapor transport growth with ZnCl2, ZnBr2, and ZnI2; an investigation of defect structure vs deviations from stoichiometry; growth and properties of (Zn3P2)/sub x/Cd3P2)/sub 1-x/ solid solutions; surface investigation on Zn3P2; investigation on Zn3P2; reactive metal junctions; and MIS structures on Zn3P2. Appended are two manuscripts, one on transport mechanisms for mg/Zn3P2 junctions and the other on properties of Zn3P2 crystals and devices.
- Publication:
-
Stanford Univ. Report
- Pub Date:
- 1982
- Bibcode:
- 1982stan.reptS....B
- Keywords:
-
- Crystal Growth;
- Heterojunctions;
- Phosphides;
- Photoelectric Materials;
- Photoluminescence;
- Zinc Compounds;
- Phosphorus Compounds;
- Photoconductivity;
- Photoelectricity;
- Stoichiometry;
- Thin Films;
- Solid-State Physics