On the behaviour and origin of the major deep level (EL2) in GaAs
Abstract
In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.
- Publication:
-
IN: Semi-insulating III-V materials. Nantwich
- Pub Date:
- 1982
- Bibcode:
- 1982sim..book..154L
- Keywords:
-
- Carrier Density (Solid State);
- Crystal Growth;
- Gallium Arsenides;
- Impurities;
- Semiconductors (Materials);
- Vacancies (Crystal Defects);
- Acceptor Materials;
- Donor Materials;
- Doped Crystals;
- Melts (Crystal Growth);
- Microgravity Applications;
- Performance Prediction;
- Single Crystals;
- Space Commercialization;
- Solid-State Physics