Status of ion-implanted silicon solar cells

Ion implantation is considered as a possible low-cost 'cold' process for junction formation in terrestrial solar cell fabrication. But it requires a subsequent implantation damage annealing step. Various annealing techniques as thermal treatment or irradiation with laser or electron beams have been applied. The results indicate for all annealing techniques lower efficiencies compared with standard diffused cells. The problems of annealing are discussed. The influence of a post-anneal heat treatment and of resistivity on the performance of pulsed electron beam annealed cells is evaluated.