Future trends in optoelectronics, both integrated and otherwise
Abstract
This paper reviews recent progress in the development of integrated optical circuits involving the GaAs/AlGaAs double heterostructure system. Devices utilizing periodic corrugations or gratings are considered briefly, whereas alternate attempts to fabricate optical circuits by chemical etching are discussed in more detail. The first integrated laser-waveguide-detector circuit with transverse single-mode confinement is reported. Other compound semiconductor systems, such as InGaAsP/InP, are considered. Recent advances in processing techniques for optical integration, such as reactive-ion etching, and the use of lasers or electron beams for device processing, will also be described.
- Publication:
-
NTC 1982; National Telesystems Conference
- Pub Date:
- 1982
- Bibcode:
- 1982ntc..confR...2M
- Keywords:
-
- Gallium Arsenides;
- Integrated Optics;
- Optical Waveguides;
- Photonics;
- Semiconductor Lasers;
- Technological Forecasting;
- Aluminum Gallium Arsenides;
- Etching;
- Fabrication;
- Gratings (Spectra);
- Heterojunction Devices;
- Electronics and Electrical Engineering