Rapid annealing in advanced bipolar microcircuits
Abstract
Several new devices technologies were characterized for rapid-annealing following a burst of fast neutrons. The annealing responses for the breakout devices were found to be consistent with those predicted from existing models. An analytical expression derived from the model is presented. Several of the breakout devices studied indicated that digital integrated circuits produced from some of the technologies studied could have neutron hardness levels in excess of 1 x 10 to the 15th power nvt(E 10 keV). In addition the neutron response data for FAST and ALS and gates are presented.
- Publication:
-
Presented at the IEEE Ann. Conf. on Nucl. and Space Radiation Effect
- Pub Date:
- July 1982
- Bibcode:
- 1982nsre.confQ....W
- Keywords:
-
- Annealing;
- Fast Neutrons;
- High Frequencies;
- Radiation Hardening;
- Dielectric Properties;
- Electric Potential;
- Electron Density (Concentration);
- Insolation;
- Microstructure;
- Predictions;
- Electronics and Electrical Engineering