Capabilities and potential of millimeter-wave IMPATT devices
Abstract
Theoretical investigations of IMPATT diodes are carried out at 30, 40, 60 and 94 GHz. GaAs, Si and InP diodes are simulated. Several single- and double-drift doping profiles are considered. Extensive results as a function of RF voltage amplitude and dc current density are presented. Taking thermal resistance into account, the expected CW performance of each structure is presented, such that the maximum allowable diode temperature is 525 deg K. Matching each device to 1-ohm circuit resistance gives an estimate of maximum obtainable pulsed power. Finally, CW and pulsed performance for all structures and materials are compared over the entire frequency range simulated.
- Publication:
-
Michigan Univ. Final Report
- Pub Date:
- November 1982
- Bibcode:
- 1982muaa.rept.....M
- Keywords:
-
- Avalanche Diodes;
- Continuous Radiation;
- Gallium Arsenides;
- Millimeter Waves;
- Silicon;
- Current Density;
- Estimates;
- Extremely High Frequencies;
- Thermal Resistance;
- Electronics and Electrical Engineering