Semiconductor processing
Abstract
The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.
- Publication:
-
The Mater. Process. Res. Base of the Mater. Process. Center
- Pub Date:
- June 1982
- Bibcode:
- 1982mprb.rept..245.
- Keywords:
-
- Crystal Growth;
- Heat Treatment;
- Semiconductors (Materials);
- Silicon Films;
- Single Crystals;
- Amorphous Materials;
- Crystal Structure;
- Crystallinity;
- Heat Transfer;
- Mass Transfer;
- Mechanical Properties;
- Solid-State Physics