Manufacturing technology program for high burnout silicon Schottky-barrier mixer diodes for Navy air-to-air avionics
This report describes the establishment of low cost semiconductor processes to manufacture low-barrier-height high-burnout X-band silicon Schottky barrier diodes in production quantities. These devices are thermal-compression-bonded in a rugged low-cost pill (ODS-119) package. They exhibit an overall low noise figure of 7.0 dB (single side band) at 0.5 mW of local oscillator power level and RF burnout of 12 watts (tau = 1 microsec and 1000 Hz rep. rate). Reliability and ruggedness of the design has been demonstrated by tests taken from MIL.S 19500 F.
- Pub Date:
- February 1982
- Schottky Diodes;
- Extremely High Frequencies;
- Radar Equipment;
- Electronics and Electrical Engineering