Modulator reliability and bandwidth improvement: Replacing tetrodes with MOSFETs
Three types of power MOS field effect transistors (FET) were studied with the intent of replacing a parallel pair of vacuum tube tetrodes in a linear modulator. The tetrodes have the shortest lifetimes of any other tubes in the system. The FETs offer definite performance advantages when compared to bipolar transistors and definite cost advantages when compared to vacuum tubes. Replacement of the tetrodes does however require careful consideration of voltage, current and to a lesser extent bandwidth capability in order to enhance overall modulator reliability without compromising present performance.
Proceedings of the 1981 Linear Accelerator Conf.
- Pub Date:
- February 1982
- Field Effect Transistors;
- Life (Durability);
- Cost Reduction;
- Failure Analysis;
- Solid State;
- Tables (Data);
- Electronics and Electrical Engineering