20 GHz GaAs FET transmitter
Abstract
An assessment is made of the progress made toward performance goals of 7.5 W with 30 dB of gain, and a 2.5 GHz bandwidth at 19 GHz, in the development of a 20 GHz FET transmitter for the NASA 30/20 GHz Communications Satellite. This amplifier employs a 90 percent-efficient, 16-way waveguide circuit combination of module amplifiers. Each of these module amplifiers generates 0.5 W of output power and 30 dB of gain, with six gain stages and two waveguide-to-microstrip transitions whose loss is as low as less than 0.25 dB.
- Publication:
-
ICC 1982 - The Digital Revolution, Volume 2
- Pub Date:
- 1982
- Bibcode:
- 1982icc.....2Q...3B
- Keywords:
-
- Communication Satellites;
- Field Effect Transistors;
- Microwave Amplifiers;
- Power Amplifiers;
- Power Gain;
- Technology Assessment;
- Amplifier Design;
- Bandwidth;
- Gallium Arsenides;
- Microstrip Devices;
- Power Efficiency;
- Transmission Loss;
- Waveguides;
- Electronics and Electrical Engineering