Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier
Abstract
A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.
- Publication:
-
Final Technical Report
- Pub Date:
- November 1982
- Bibcode:
- 1982heoc.rept.....S
- Keywords:
-
- Amplifiers;
- Field Effect Transistors;
- Photodiodes;
- Cadmium;
- Gallium Arsenides;
- Low Temperature;
- Mercury Tellurides;
- Electronics and Electrical Engineering