Interface state analysis in MOS devices
Abstract
Oxygen implantation in MOS structures showed little influence on stoichiometry and interface state density after annealing. In MOS structures, interface traps at the Si-SiO2 interface are observed and separated from traps in the nitride. IR-excitation of interface traps showed a low absorption cross section. An increased density of interface traps is observed at the boundary of microstructures.
- Publication:
-
Final Report
- Pub Date:
- December 1982
- Bibcode:
- 1982enug.rept.....S
- Keywords:
-
- Interfaces;
- Metal Oxide Semiconductors;
- Microstructure;
- Absorption Cross Sections;
- Annealing;
- Nitrides;
- Solid-State Physics