CO2 laser waveguiding in GaAs MBE layers

In this report, experimental analyses of the electronic and optical properties of a prototype single layer MBE (Molecular Beam Epitaxy) waveguide are presented. A polished (100) wafer of n(+)-GaAs heavily doped with silicon was used as the waveguide substrate. The free carrier concentration was approximately 3 x 10 to the 18th power/cc. An epitaxial layer of n-GaAs lightly doped with tin was then grown on the substrate. The carrier concentration of the epitaxial layer was targeted to be 3 - 5 x 10 to the 15th power/cc.