GaAs FET principles and technology
Abstract
A comprehensive review of the materials and device technology necessary for high-performance GaAs FET devices is presented. Particular consideration is given to semiinsulating GaAs substrates, materials technology (vapor-phase epitaxy, molecular beam epitaxy, and implantation), low-noise GaAs FETs, power GaAs FETs, reliability, microwave circuit technology, and digital integrated circuit technology. The future prospects of GaAs FET technology are examined.
- Publication:
-
Dedham
- Pub Date:
- 1982
- Bibcode:
- 1982ah...book.....D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microelectronics;
- Microwave Circuits;
- Technology Assessment;
- Circuit Reliability;
- Digital Systems;
- Fabrication;
- Ion Implantation;
- Low Noise;
- Molecular Beam Epitaxy;
- Molecular Electronics;
- Power Conditioning;
- Principles;
- Substrates;
- Technological Forecasting;
- Thermal Stability;
- Vapor Phase Epitaxy;
- Electronics and Electrical Engineering