Luminescence spectra of stripe-geometry laser heterostructures in GaAs-Al/x/Ga/1-x/As

A study has been made of the emission spectra of the mirror and side faces of stripe-geometry double-heterostructure injection lasers of the system GaAs-Al(x)Ga(1-x)As. Three bands have been identified experimentally in the luminescence spectra. The observed spectrum structure is ascribed to the photoluminescence of diode heterolayers amplified by the active layer electroluminescence and emission reabsorption by the heterojunction passive regions. The results obtained are used to analyze the optical properties of the passive region and estimate their effect on the power characteristics of stripe-contact laser diodes.