On the possibility of stress-induced superconductivity in the mos inversion layer Si(100)/SiO 2
Abstract
The theory of pairing interaction of two-dimensional systems is applied to electrons at the stressed Si(100)/SiO 2 interface. At high densities electron-phonon coupling is found to be the dominant pairing mechanism, leading to superconducting transition temperatures of the order of mK.
- Publication:
-
Surface Science
- Pub Date:
- January 1982
- DOI:
- 10.1016/0039-6028(82)90595-7
- Bibcode:
- 1982SurSc.113..256K