Optimum baritt structure
Abstract
The recently studied planar-doped triangular barrier structure is analyzed theoretically for a possible application as a barrier injection transit time device (BARITT). The small signal impedance as well as the large-signal power characteristics are calculated. Compared to the conventional BARITT structures the new device offers a significant improvement in its frequency range and generated power.
- Publication:
-
Solid State Electronics
- Pub Date:
- September 1982
- DOI:
- 10.1016/0038-1101(82)90185-X
- Bibcode:
- 1982SSEle..25..943L
- Keywords:
-
- Avalanche Diodes;
- Barritt Diodes;
- Network Analysis;
- Network Synthesis;
- P-N Junctions;
- Lc Circuits;
- Power Efficiency;
- Electronics and Electrical Engineering