Threshold voltage models of short, narrow and small geometry MOSFET's: A review
Abstract
As MOS devices are shrunk to near and submicrometer dimensions, short channel, narrow width and small geometry effects cause variations in the threshold voltage. It is critical for circuit and device designers to be able to predict these variations. This paper reviews and compares the various modeling techniques developed to determine the threshold voltage as a function of device geometry. It is hoped this review will provide insights for the development of new models for today's small devices.
- Publication:
-
Solid State Electronics
- Pub Date:
- July 1982
- DOI:
- Bibcode:
- 1982SSEle..25..621A
- Keywords:
-
- Energy Bands;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Performance Prediction;
- Threshold Voltage;
- Volt-Ampere Characteristics;
- Design Analysis;
- Electric Potential;
- Mathematical Models;
- Packing Density;
- Solid State Physics;
- Thresholds;
- Electronics and Electrical Engineering