Flicker noise in Gunn diodes
Abstract
The low frequency noise of Gunn diodes fabricated by either a planar technique or a mesa technique on a GaAs substrate was measured. The existence of 1/ƒ noise was demonstrated. We were unable to discriminate between the number fluctuation model and the mobility fluctuation model of 1/ƒ noise. It seems from the data that Hooge's parameter α, if present, is not field dependent as in Si. Independent α( E) measurements might allow us to discriminate between the two models.
- Publication:
-
Solid State Electronics
- Pub Date:
- June 1982
- DOI:
- Bibcode:
- 1982SSEle..25..511P
- Keywords:
-
- Background Noise;
- Flicker;
- Gallium Arsenides;
- Gunn Diodes;
- Noise Spectra;
- Carrier Mobility;
- Fluctuation Theory;
- Silicon Junctions;
- Substrates;
- Electronics and Electrical Engineering