Forward-bias impedance of GaAs 1-xP x LED's
Abstract
The forward bias impedance characteristics of GaAs 1- xP x LED's have been determined. In all cases, the equivalent parallel capacitance reaches a maximum and then either saturates ( x = 0.4) or becomes negative at certain frequencies ( x = 0.85 and x = 1). The current densities at which Cp maxima are reached are below typical values for display, multiplexing or optical emitters applications (i.e. JF = 1 A/cm 2 for x = 0.85). It is suggested large series resistances for x = 0.4, and conductivity modulation effects for x > 0.4 are responsible for the above impedance behavior.
- Publication:
-
Solid State Electronics
- Pub Date:
- May 1982
- DOI:
- Bibcode:
- 1982SSEle..25..355S
- Keywords:
-
- Electrical Impedance;
- Gallium Arsenides;
- Gallium Phosphides;
- Impedance Measurement;
- Light Emitting Diodes;
- Bias;
- Frequency Response;
- Light Transmission;
- Temperature Dependence;
- Transmission Efficiency;
- Electronics and Electrical Engineering