Forwardbias impedance of GaAs _{1x}P _{x} LED's
Abstract
The forward bias impedance characteristics of GaAs _{1 x}P _{x} LED's have been determined. In all cases, the equivalent parallel capacitance reaches a maximum and then either saturates ( x = 0.4) or becomes negative at certain frequencies ( x = 0.85 and x = 1). The current densities at which C_{p} maxima are reached are below typical values for display, multiplexing or optical emitters applications (i.e. J_{F} = 1 A/cm ^{2} for x = 0.85). It is suggested large series resistances for x = 0.4, and conductivity modulation effects for x > 0.4 are responsible for the above impedance behavior.
 Publication:

Solid State Electronics
 Pub Date:
 May 1982
 DOI:
 10.1016/00381101(82)901198
 Bibcode:
 1982SSEle..25..355S
 Keywords:

 Electrical Impedance;
 Gallium Arsenides;
 Gallium Phosphides;
 Impedance Measurement;
 Light Emitting Diodes;
 Bias;
 Frequency Response;
 Light Transmission;
 Temperature Dependence;
 Transmission Efficiency;
 Electronics and Electrical Engineering