A numerical analysis of bulk-barrier diodes

A selfconsistent numerical analysis of bulk-barrier diodes (BBD) is presented. The principal way of operation of a BBD is explained. A computer program which can accurately model second order effects is used to achieve basic understanding of the internal electric behaviour of a BBD. The distributions of the relevant physical quantities in the interior of a BBD are discussed. Measured and simulated characteristics which show good agreement, owing to the carefully modeled physical parameters, are compared. The sensitivity of electrical properties to minute variations of the doping profile is presented. This can only be done by a program simulating the characteristics of a BBD. The advantages and disadvantages of a BBD compared to a standard silicon diode and a Schottky diode are discussed.