New techniques of capacitance-voltage measurements of semiconductor junctions
Abstract
Two novel measurement techniques for C- V characteristics of a semiconductor junction are described which provide substantial improvement over previous methods. One is a new method to implement the constant-capacitance voltage transient experiment using the idea of a capacitance operational amplifier. The other is an improved method of quasi-static capacitance-voltage measurement using an integration scheme instead of the usual differentation scheme, with substantial noise reduction and improvement of sensitivity.
- Publication:
-
Solid State Electronics
- Pub Date:
- February 1982
- DOI:
- 10.1016/0038-1101(82)90037-5
- Bibcode:
- 1982SSEle..25...95L
- Keywords:
-
- Capacitance;
- Electrical Measurement;
- Semiconductor Junctions;
- Feedback Control;
- Integrators;
- Noise Reduction;
- Electronics and Electrical Engineering